? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (chip capability) 160 a i c110 t c = 110 c 68 a i lrms terminal current limit 100 a i cm t c = 25 c, 1ms 400 a ssoa v ge = 15v, t vj = 125 c, r g = 3 i cm = 150 a (rbsoa) clamped inductive load @ 0.8 ? v ces p c t c = 25 c 360 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60hz t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.3/11.5 nm/lb.in. weight 30 g features z optimized for low conduction losses z isolation voltage 3000 v~ z square rbsoa z international standard package a dvantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 75 a v ge = 0v t j = 125 c 750 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 60a, v ge = 15v, note 1 1.35 v ds99607a(11/08) genx3 tm 600v igbt IXGN72N60A3 v ces = 600v i c110 = 68a v ce(sat) 1.35v sot-227b, minibloc g = gate, c = collector, e = emitter c either emitter terminal can be used as main or kelvin emitter g e c e c c e153432 ultra low vsat pt igbt for up to 5khz switching e preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXGN72N60A3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 48 76 s c ies 6600 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 360 pf c res 80 pf q g(on) 230 nc q ge i c = 60a, v ge = 15v, v ce = 0.5 ? v ces 40 nc q gc 78 nc t d(on) 31 ns t ri 34 ns e on 1.38 mj t d(off) 320 ns t fi 250 ns e off 3.5 mj t d(on) 29 ns t ri 32 ns e on 2.6 mj t d(off) 510 ns t fi 375 ns e off 6.5 mj r thjc 0.35 c/w r thck 0.05 c/w note: 1. pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 sot-227b minibloc (ixgn) preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. inductive load, t j = 25 c i c = 50a, v ge = 15v v ce = 480v, r g = 3 inductive load, t j = 125c i c = 50a, v ge = 15v v ce = 480v, r g = 3
? 2008 ixys corporation, all rights reserved IXGN72N60A3 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 330 012345678 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 120a i c = 60a i c = 30a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 5 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 120a 60a 30a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGN72N60A3 ixys ref: g_72n60a3(76)3-25-08-b fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 200 220 240 q g - nanocoulombs v ge - volts v ce = 300v i c = 60a i g = 10 ma fig. 9. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 100 150 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 125oc r g = 3 ? dv / dt < 10v / ns
? 2008 ixys corporation, all rights reserved IXGN72N60A3 fig. 17. inductive turn-off switching times vs. junction temperature 220 240 260 280 300 320 340 360 380 400 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 220 260 300 340 380 420 460 500 540 580 t d(off) - nanoseconds t f t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 25a, 50a, 100a fig. 12. inductive switching energy loss vs. gate resistance 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 r g - ohms e off - millijoules 0 1 2 3 4 5 6 7 8 9 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 50a i c = 100a i c = 25a fig. 15. inductive turn-off switching times vs. gate resistance 360 363 366 369 372 375 378 381 384 387 390 0 5 10 15 20 25 30 35 r g - ohms t f - nanoseconds 400 500 600 700 800 900 1000 1100 1200 1300 1400 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 100a i c = 50a i c = 25a fig. 13. inductive switching energy loss vs. collector current 0 2 4 6 8 10 12 14 16 18 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules 0.00 0.75 1.50 2.25 3.00 3.75 4.50 5.25 6.00 6.75 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 2 4 6 8 10 12 14 16 18 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0 1 2 2 3 4 5 5 6 7 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 50a i c = 100a i c = 25a fig. 16. inductive turn-off switching times vs. collector current 220 240 260 280 300 320 340 360 380 400 20 30 40 50 60 70 80 90 100 i c - amperes t f - nanoseconds 250 290 330 370 410 450 490 530 570 610 t d(off) - nanoseconds t f t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGN72N60A3 ixys ref: g_72n60a3(76)3-25-08-b fig. 18. inductive turn-on switching times vs. gate resistance 10 20 30 40 50 60 70 80 90 100 110 120 0 5 10 15 20 25 30 35 r g - ohms t r - nanoseconds 10 20 30 40 50 60 70 80 90 100 110 120 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 25a i c = 50a i c = 100a fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 80 90 20 30 40 50 60 70 80 90 100 i c - amperes t r - nanoseconds 26 27 28 29 30 31 32 33 34 35 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 20. inductive turn-on switching times vs. junction temperature 10 20 30 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 26 27 28 29 30 31 32 33 34 35 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 , v ge = 15v v ce = 480v i c = 25a i c = 50a i c = 100a
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